Consider the MOSFET circuit with variable voltage shown in Example 7.4.2, with RD = 2 kand VDD = 12 V. The static characteristics of the n-channel enhancement MOSFET are given in Figure P7.4.17. (a) Draw the load line and find the operating point if vGS = 4 V.
(b) Sketch the resulting transfer curves (i.e., iD and vDS as a function of vGS) showing cut off, active, and saturation regions.
(c) For relatively undistorted amplification, the MOSFET circuit must be restricted to signal variations within the active region. Let vGS (t) = 4 + 0.2 sin ωt V. Sketch iD(t) and vDS(t), and estimate the resulting voltage amplification Av.
(d) Let vGS (t) = 6 sin ωt, where ω is slow enough to satisfy the static condition. Sketch iD(t) and vDS(t) obtained from the transfer curves. Comment on the action of the MOSFET in the switching circuit.
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